shantou huashan electronic devices co.,ltd . applications low frequency power amplifier applications. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 60 v i c =10 a, i e =0 bv ceo collector-emitter breakdown voltage 50 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 5 v i e =10 a i c =0 i cbo collector cut-off current 1.0 a v cb =40v, i e =0 i ebo emitter cut-off current 1.0 a v eb =4v, i c =0 h fe(1) dc current gain 60 320 v ce =5v, i c =50ma h fe(2) 35 v ce =5v, i c =400ma v ce(sat) collector- emitter saturation voltage 0.2 0.6 v i c =400ma, i b =40ma v be(sat) base-emitter saturation voltage 0.9 1.2 v i c =400ma, i b =40ma f t current gain-bandwidth product 120 mhz v ce =10v, i c =10ma cob output capacitance 5 pf v cb =10v, f=1mhz h fe classification d e f 60 120 120 200 160 320 t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation 600mw v cbo collector-base voltage 60v v ceo collector-emitter voltage 50v v ebo emitter-base voltage 5v i c collector current 500ma i cp collector current pulse 800ma 1 D emitter e 2 D collector c 3 D base b to-92 H2274 npn s i l i c o n t r a n s i s t o r
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